Diode - Diode objective questions and answers

46. The most commonly used material for gunn diodes is

   A.Ge

   B.Si

   C.GaAs

   D.Se

47. The gunn effect is also known as

   A.Transient avalanche effect

   B.Auto electronic effect

   C.Transfer transient effect

   D.Transferred electron effect

48. The GaAs is preferred to Si for Gunn diodes because it has

   A.Capability to handle very high power densities

   B.Capability to withstand high voltages

   C.Higher ion mobility

   D.A suitable empty energy band

49. The negative resistance in a Gunn diode is because of

   A.High voltage gradient which causes the avalanche breakdown

   B.Electron transfer to a less mobile energy level

   C.Electron transfer to a more mobile energy level

   D.Tunneling across the junction

50. The minority carriers storage time in the Schottky diode is

   A.0.15 ms

   B.Zero

   C.Infinite

   D.None of the above

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