PN Junction Diode Multiple Choice Questions Answers

11. PN junction failure below 5 V is caused primarily by

   A.Avalanche breakdown

   B.Zener breakdown

   C.Either of (a) and (b) above

   D.None of the above

12. As a PN junction is forward biased

   A.Holes as well as electrons tend to drift away from the junction

   B.The depletion region decreases

   C.The barrier tends to breakdown

   D.None of the above

13. In a reverse biased PN junction, the current through the junction increases abruptly at

   A.0.5 V

   B.1.1 V

   C.0.72 V

   D.Breakdown voltage

14. The main reason why electrons can tunnel through a PN junction is that

   A.Barrier potential is very low

   B.They have high energy

   C.Impurity level is low

   D.Depletion layer is extremely thin

15. A PN junction is formed in a process which may be of

   A.Diffused type

   B.Alloyed type

   C.The grown type

   D.Any of the above

< 1 2 3 4 5 6 7 8 9 10 Next>