PN Junction Diode Multiple Choice Questions Answers


11. PN junction failure below 5 V is caused primarily by


   A.Avalanche breakdown

   B.Zener breakdown

   C.Either of (a) and (b) above

   D.None of the above


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B.Zener breakdown

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12. As a PN junction is forward biased


   A.Holes as well as electrons tend to drift away from the junction

   B.The depletion region decreases

   C.The barrier tends to breakdown

   D.None of the above


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B.The depletion region decreases

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13. In a reverse biased PN junction, the current through the junction increases abruptly at


   A.0.5 V

   B.1.1 V

   C.0.72 V

   D.Breakdown voltage


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D.Breakdown voltage

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14. The main reason why electrons can tunnel through a PN junction is that


   A.Barrier potential is very low

   B.They have high energy

   C.Impurity level is low

   D.Depletion layer is extremely thin


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D.Depletion layer is extremely thin

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15. A PN junction is formed in a process which may be of


   A.Diffused type

   B.Alloyed type

   C.The grown type

   D.Any of the above


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D.Any of the above

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